BD6757KN 查看數據表（PDF） - ROHM Semiconductor
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BD6757KN
ROHM Semiconductor
BD6757KN Datasheet PDF : 16 Pages
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BD6757KN, BD6889GU
Technical Note
●Electrical Characteristics
1) BD6757KN Electrical Characteristics (Unless otherwise specified, Ta=25°C, VCC=3.0V, VM=5.0V)
Parameter
Symbol
Min.
Limit
Typ.
Max.
Unit
Conditions
Overall
Circuit current
during standby operation
ICCST
-
0
10
μA PS=0V
Circuit current
ICC
-
1.0
3.0
mA PS=VCC with no signal
Control input (IN=PS, IN1A to IN7B, and LIMSW)
High level input voltage
VINH
2.0
-
-
V
Low level input voltage
VINL
-
-
0.7
V
High level input current
IINH
15
30
60
μA VINH=3V
Low level input current
IINL
-1
0
-
μA VINL=0V
Pull-down resistor
RIN
50
100
200
kΩ
Charge pump
Charge pump voltage
VCP
10
11
-
V
UVLO
UVLO voltage
VUVLO
1.6
-
2.4
V
Full-ON Drive block (ch1 to ch6)
Output ON-Resistance
RON
-
1.3
1.6
Ω
Io=±400mA on high and low sides
in total
Pulse input response
tp
100
-
-
ns With an input pulse with of 200ns
Linear Constant-Current Drive block (ch7)
Output ON-Resistance
RON
-
0.9
1.1
VREF output voltage
VREF
0.88
0.90
0.92
Output limit current 1
IOL1
388
400
412
Output limit current 2
IOL2
285
300
315
Output limit current 3
IOL3
190
200
210
Digital NPN transistor block for photo-interrupter waveform shaping
Ω
Io=±400mA on high and low sides
in total
V Iout=0~1mA
mA
RNF=0.5Ω with a load of 10Ω
VLIMH(L)=0.2V, LIMSW=0V(3V)
mA
RNF=0.5Ω with a load of 10Ω
VLIMH(L)=0.15V, LIMSW=0V(3V)※5
mA
RNF=0.5Ω with a load of 10Ω
VLIMH(L)=0.1V, LIMSW=0V(3V)※5
Input current
ISIH
-
-
0.1
mA SIx=3V
Low level output voltage
VSOL
-
0.1
0.25
V SIx=3V, ISO=0.5mA
Input dividing resistance
RSIL
70
100
130
kΩ
Output pull-up resistance RSOH
5
10
Input dividing resistance
comparison
-
0.8
1.0
※5 Design target value (Not all shipped devices are fully tested.)
20
kΩ
1.2
-
Division resistance comparison
between SIx and GND※5
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© 2009 ROHM Co., Ltd. All rights reserved.
2/15
2009.06 - Rev.A
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