WFF830 查看數據表（PDF） - Unspecified

零件编号

产品描述 (功能)

生产厂家

WFF830

Silicon N-Channel MOSFET

Unspecified 

Features

■ 4.5A,500V,RDS(on)(Max 1.5Ω)@VGS=10V

■ Ultra-low Gate Charge(Typical 32nC)

■ Fast Switching Capability

■ 100%Avalanche Tested

■ Maximum Junction Temperature Range(150℃)

WFF830

Silicon N-Channel MOSFET

General Description

This Power MOSFET is produced using Winsemi’s advanced

planar stripe, DMOS technology. This latest technology has been

especially designed to minimize on-state resistance, have a high

rugged avalanche characteristics. This devices is specially well

suited for high efficiency switch model power supplies, power factor

correction and half bridge and full bridge resonant topology line a

electronic lamp ballast.

Absolute Maximum Ratings

Symbol

Parameter

VDSS

Drain Source Voltage

Continuous Drain Current(@Tc=25℃)

ID

Continuous Drain Current(@Tc=100℃)

IDM

Drain Current Pulsed

VGS

Gate to Source Voltage

EAS

Single Pulsed Avalanche Energy

EAR

Repetitive Avalanche Energy

dv/dt

Peak Diode Recovery dv/dt

Total Power Dissipation(@Tc=25℃)

PD

Derating Factor above 25℃

TJ, Tstg

Junction and Storage Temperature

TL

Channel Temperature

*Drain current limited by maximum junction temperature

(Note1)

(Note 2)

(Note 1)

(Note 3)

Value

500

4.5*

2.9*

18*

±30

300

7.5

4.5

38

0.3

-55~150

300

Thermal Characteristics

Symbol

Parameter

RQJC

RQJA

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

Min

-

-

Value

Typ

-

-

Max

3.3

62.5

Units

V

A

A

A

V

mJ

mJ

V/ns

W

W/℃

℃

℃

Units

℃/W

℃/W

Rev.A Nov.2010

Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.

Share Link: