BY329X-1700S 查看數據表（PDF） - Philips Electronics
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BY329X-1700S Datasheet PDF : 4 Pages
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Philips Semiconductors
Damper diode
fast, high-voltage
Product specification
BY329X-1700S
THERMAL RESISTANCES
SYMBOL PARAMETER
Rth j-hs
Rth j-a
Thermal resistance junction to
heatsink
Thermal resistance junction to
ambient
CONDITIONS
with heatsink compound
without heatsink compound
in free air.
MIN.
-
-
-
TYP.
-
-
55
MAX.
4.8
5.9
-
UNIT
K/W
K/W
K/W
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
VF
Forward voltage
IR
Reverse current
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
Vfr
Forward recovery voltage
tfr
Forward recovery time
trr
Reverse recovery time
Qs
Reverse recovery charge
CONDITIONS
IF = 6.5 A
IF = 6.5 A; Tj = 125 ˚C
VR = VRWMmax
VR = VRWMmax; Tj = 125 ˚C
MIN.
-
-
-
-
TYP.
1.35
1.2
-
-
MAX.
1.65
1.5
250
1.0
UNIT
V
V
µA
mA
CONDITIONS
IF = 6.5 ; dIF/dt = 50 A/µs
IF = 6.5 A; dIF/dt = 50 A/µs; VF = 5 V
IF = 1 A; -dIF/dt = 50 A/µs; VR ≥ 30 V
IF = 2 A; -dIF/dt = 20 A/µs; VR ≥ 30 V
MIN.
-
-
-
-
TYP.
30
300
130
0.7
MAX.
40
320
170
1.0
UNIT
V
ns
ns
µC
IF
I
F
dI
F
dt
10%
tfr
time
trr
time
VF
Qs
V fr
5V
I
VF
R
25%
100%
time
Fig.1. Definition of Vfr and tfr
Fig.2. Definition of trr and Qs
September 1998
2
Rev 1.200
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