2SB1559 查看數據表（PDF） - Inchange Semiconductor
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2SB1559 Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon PNP Darlington Power Transistors
Product Specification
2SB1559
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=-30mA ;IB=0
-150
V
VCEsat Collector-emitter saturation voltage IC=-6A ;IB=-6mA
-2.5
V
VBEsat Base-emitter saturation voltage
IC=-6A ;IB=-6mA
-3.0
V
ICBO
Collector cut-off current
VCB=-160V; IE=0
-100 μA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-100 μA
hFE
DC current gain
IC=-6A ; VCE=-4V
5000
Cob
Output capacitance
IE=0 ; VCB=-10V;f=1MHz
160
pF
fT
Transition frequency
IC=1A ; VCE=-12V
65
MHz
Switching times
固I电NC半H导A体NGE SEMICONDUCTOR ton
Turn-on time
ts
Storage time
tf
Fall time
hFE Classifications
IC=-6A;RL=10Ω
IB1=- IB2=-6mA
VCC=60V
0.7
μs
3.6
μs
0.9
μs
O
P
Y
5000-12000 6500-20000 15000-30000
2
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