2SA2021G 查看數據表（PDF） - Panasonic Corporation
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2SA2021G Datasheet PDF : 4 Pages
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Transistors
This product complies with the RoHS Directive (EU 2002/95/EC).
2SA2021G
Silicon PNP epitaxial planar type
For general amplification
Complementary to 2SC5609G
Features
High forward current transfer ratio hFE
/ Absolute Maximum Ratings Ta = 25°C
e . Parameter
Symbol Rating
Unit
c tage Collector-base voltage (Emitter open)
n d s Collector-emitter voltage (Base open)
ycle Emitter-base voltage (Collector open)
a e lifec Collector current
ct Peak collector current
n u du Collector power dissipation
Pro Junction temperature
te tin four . Storagetemperature
VCBO
–60
V
VCEO
–50
V
VEBO
–7
V
IC
–100
mA
ICP
–200
mA
PC
100
mW
Tj
125
°C
Tstg –55 to +125 °C
Package
Code
SSSMini3-F2
Pin Name
1. Base
2. Emitter
3. Collector
Marking Symbol: 3E
in n followinagnce typpee ped formatio/ n Electrical Characteristics Ta = 25°C±3°C
es ten e ty d ty t in /en Parameter
Symbol
Conditions
Min Typ Max
a o lud ain nc ue pe tes .jp Collector-base voltage (Emitter open)
inc m na tin ty la .co Collector-emitter voltage (Base open)
c ed ned inte con ued out onic Emitter-base voltage (Collector open)
M is tinu pla ma dis tin ab as Collector-base cutoff current (Emitter open)
iscon laned iscon URL .pan Collector-emitter cutoff current (Base open)
d g on Forward current transfer ratio
e/D p win ic Collector-emitter saturation voltage
Danc follo .sem Transition frequency
n it w Collector output capacitance
ainte e vis ://ww (Common base, input open circuited)
VCBO
VCEO
VEBO
ICBO
ICEO
hFE
VCE(sat)
fT
Cre
IC = –10 mA, IE = 0
IC = –100 mA, IB = 0
IE = –10 mA, IC = 0
VCB = –20 V, IE = 0
VCE = –10 V, IB = 0
VCE = –10 V, IC = –2 mA
IC = –100 mA, IB = –10 mA
VCB = –10 V, IE = 1 mA, f = 200 MHz
VCB = –10 V, IE = 0, f = 1 MHz
–60
–50
–7
– 0.1
–100
180
390
– 0.3 – 0.5
80
2.7
15
M Pleas http Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Unit
V
V
V
mA
mA
V
MHz
pF
Publication date : November 2008
SJC00426BED
1
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