A1452A 查看數據表（PDF） - Toshiba
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A1452A Datasheet PDF : 5 Pages
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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1452A
2SA1452A
High-Speed, High-Current Switching Applications
Unit: mm
• Low collector saturation voltage: VCE (sat) = −0.4 V (max) (IC = −6 A)
• High-speed switching: tstg = 1.0 μs (typ.)
• Complementary to 2SC3710A
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
−80
V
Collector-emitter voltage
VCEO
−80
V
Emitter-base voltage
VEBO
−6
V
Collector current
IC
−12
A
Base current
IB
−2
A
Collector power dissipation
(Tc = 25°C)
PC
30
W
JEDEC
―
Junction temperature
Storage temperature range
Tj
150
°C
Tstg
−55 to 150
°C
JEITA
TOSHIBA
―
2-10R1A
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
Weight: 1.7 g (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
2006-11-09
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