FGW35N60HD
Graph.13
FWD Forward voltage drop (VF-IF)
30
25
Tj=175℃
Tj=25℃
20
15
10
5
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VF [V]
Graph.15
Typical reverse recovery loss vs. IF
Tj=175ºC, VCC=400V, L=500µH
VGE=15V, RG=10Ω
300
250
200
150
100
50
0
0
5
10
15
20
25
30
35
IF [A]
Discrete IGBT
http://www.fujielectric.com/products/semiconductor/
Graph.14
Typical reverse recovery characteristics vs. IF
Tj=175ºC, VCC=400V, L=500µH
VGE=15V, RG=10Ω
150
1.50
125
1.25
100
1.00
Qrr
75
0.75
trr
50
0.50
25
0.25
0
0.00
0
5
10
15
20
25
30
35
IF [A]
Graph.16
Reverse biased Safe Operating Area
Tj≤175ºC, VGE=+15V/0V, RG=10Ω
200
150
100
50
0
0
200
400
600
800
Collector-Emitter voltage : VCE [V]
5