IRF520(2011) 查看數據表（PDF） - Vishay Semiconductors
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IRF520 Datasheet PDF : 9 Pages
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IRF520, SiHF520
Vishay Siliconix
750
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds Shorted
600
Crss = Cgd
Coss = Cds + Cgd
450
Ciss
300
150
0
100
91017_05
Coss
Crss
101
VDS, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
101
175 °C
25 °C
100
10-1
0.5
91017_07
VGS = 0 V
0.6 0.7 0.8 0.9 1.0 1.1 1.2
VSD, Source-to-Drain Voltage (V)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
20 ID = 9.2 A
16
VDS = 80 V
VDS = 50 V
12
VDS = 20 V
8
4
0
0
91017_06
For test circuit
see figure 13
4
8
12
16
20
QG, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
103
Operation in this area limited
5
by RDS(on)
2
102
5
10 µs
2
100 µs
10
5
1 ms
2
1
5
2
0.1
0.1 2
10 ms
51
TC = 25 °C
TJ = 175 °C
Single Pulse
2 5 10 2
5 102 2
5 103
91017_08
VDS, Drain-to-Source Voltage (V)
Fig. 8 - Maximum Safe Operating Area
www.vishay.com
4
Document Number: 91017
S11-0511-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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