SIHF520-E3 查看數據表（PDF） - Vishay Semiconductors
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SIHF520-E3 Datasheet PDF : 8 Pages
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IRF520, SiHF520
Vishay Siliconix
600
ID
Top 3.8 A
500
6.5 A
Bottom 9.2 A
400
300
200
100
VDD = 25 V
0
25
50
75
100 125 150 175
91017_12c
Starting TJ, Junction Temperature (°C)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
10 V
QGS
VG
QG
QGD
Charge
Fig. 13a - Basic Gate Charge Waveform
Current regulator
Same type as D.U.T.
12 V
50 kΩ
0.2 µF
0.3 µF
+
D.U.T. - VDS
VGS
3 mA
IG
ID
Current sampling resistors
Fig. 13b - Gate Charge Test Circuit
www.vishay.com
6
Document Number: 91017
S-81240-Rev. A, 16-Jun-08
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