G8605-13(2001) 查看數據表（PDF） - Hamamatsu Photonics

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G8605-13
(Rev.:2001)

InGaAs PIN photodiode

Hamamatsu Photonics 

s Terminal capacitance vs. reverse voltage

10 nF

(Typ. Ta=25 ˚C, f=1 MHz)

G8605-15/-25

1 nF

G8605-12/-22

G8605-13/-23

100 pF

G8605-11/-21

10 pF

1 pF

0.01

0.1

1

10

100

REVERSE VOLTAGE (V)

KIRDB0243EA

In applications requiring high-speed

response, the lead length should be as

short as possible to minimize the termi-

nal capacitance.

s Thermistor temperature characteristic

106

(Typ.)

105

104

103

-40

-20

0

20

ELEMENT TEMPERATURE (˚C)

KIRDB0116EA

s Current vs. voltage characteristics of TE-cooler

(Typ. Ta=25 ˚C, Thermal resistance of heatsink=3 ˚C/W)

1.6

1.4

1.2

ONE-STAGE

TE-COOLED TYPE

1.0

0.8

0.6

TWO-STAGE

0.4

TE-COOLED TYPE

0.2

0

0

0.5

1.0

1.5

VOLTAGE (V)

KIRDB0115EA

InGaAs PIN photodiode G8605 series

s Shunt resistance vs. element temperature

10 GΩ

(Typ. VR=10 mV)

1 GΩ

100 MΩ

10 MΩ G8605-13/-23

1 MΩ

G8605-15/-25

G8605-11/-21

G8605-12/-22

100 kΩ

-40 -20

0

20

40

60

ELEMENT TEMPERATURE (˚C)

80

KIRDB0244EA

s Cooling characteristics of TE-cooler

40 (Typ. Ta=25 ˚C, Thermal resistance of heatsink=3 ˚C/W)

20

ONE-STAGE

TE-COOLED TYPE

0

-20

TWO-STAGE

-40 TE-COOLED TYPE

-60

0

0.4

0.8

1.2

CURRENT (A)

1.6

KIRDB0231EA

3

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