STU446S 查看數據表（PDF） - Samhop Mircroelectronics
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STU446S Datasheet PDF : 8 Pages
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STU/D446S
Ver 2.0
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
40
IDSS
Zero Gate Voltage Drain Current
VDS=32V , VGS=0V
IGSS
Gate-Body Leakage Current
VGS= ±20V , VDS=0V
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
VDS=VGS , ID=250uA
1.7
RDS(ON)
gFS
Drain-Source On-State Resistance
Forward Transconductance
VGS=10V , ID=19A
VGS=4.5V , ID=16A
VDS=5V , ID=19A
DYNAMIC CHARACTERISTICS c
CISS
Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
VDS=20V,VGS=0V
f=1.0MHz
SWITCHING CHARACTERISTICS c
tD(ON)
Turn-On Delay Time
tr
Rise Time
tD(OFF)
Turn-Off Delay Time
tf
Fall Time
VDD=20V
ID=1A
VGS=10V
RGEN= 6 ohm
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDS=20V,ID=19A,VGS=10V
VDS=20V,ID=19A,VGS=4.5V
VDS=20V,ID=19A,
VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS
Maximum Continuous Drain-Source Diode Forward Current
VSD
Diode Forward Voltage b
VGS=0V,IS=4A
Notes
a.Surface Mounted on FR4 Board,t <_ 10sec.
b.Pulse Test:Pulse Width <_ 300us, Duty Cycle <_ 2%.
c.Guaranteed by design, not subject to production testing.
d.Starting TJ=25°C,L=0.5mH,VDD = 20V.(See Figure13)
Typ Max Units
V
1
uA
±100 nA
2.0
3
V
13 16.5 m ohm
20 28 m ohm
43
S
755
pF
121
pF
102
pF
16
ns
29
ns
42
ns
10
ns
16.5
nC
8.7
nC
2.1
nC
5
nC
2
A
0.79 1.3 V
Jul,14,2011
2
www.samhop.com.tw
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