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2SC1623 查看數據表(PDF) - Transys Electronics Limited

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2SC1623
Transys-Electronics
Transys Electronics Limited Transys-Electronics
2SC1623 Datasheet PDF : 1 Pages
1
Transys
Electronics
LIMITED
SOT-23-3L Plastic-Encapsulate Transistors
2SC1623 TRANSISTOR (NPN)
FEATURES
Power dissipation
PCM: 200 mW (Tamb=25)
Collector current
ICM: 100 mA
Collector-base voltage
V(BR)CBO: 60 V
Operating and storage junction temperature range
TJ, Tstg: -55to +150
SOT-23-3L
1. BASE
2. EMITTER
3. COLLECTOR
2. 80¡ À0. 05
1. 60¡ À0. 05
ELECTRICAL CHARACTERISTICS(Tamb=25unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
VCE(sat)
VBE(sat)
fT
Test conditions
Ic=100µA, IE=0
Ic=1mA, IB=0
IE=100µA, IC=0
VCB=60V, IE=0
VEB=5V, IC=0
VCE=6V, IC=1mA
IC=100mA, IB=10mA
IC=100mA, IB=10mA
VCE=6V, IC=10mA
MIN TYP MAX UNIT
60
V
50
V
5
V
0.1 µA
0.1 µA
90
600
0.3 V
1
V
250
MHz
CLASSIFICATION OF hFE(1)
Rank
L4
Range
90-180
Marking
L4
L5
135-270
L5
L6
200-400
L6
L7
300-600
L7

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