FSQ100 查看數據表（PDF） - Fairchild Semiconductor

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FSQ100

Green Mode Fairchild Power Switch (FPS™)

Fairchild Semiconductor 

Electrical Characteristics

TA = 25°C, unless otherwise specified.

Symbol

Parameter

Conditions

Min. Typ. Max.

SenseFET Section

IDSS

RDS(ON)

Zero-Gate-Voltage Drain Current

Drain-Source On-State Resistance(5)

VDS=650V, VGS=0V

VDS=520V, VGS=0V, TC=125°C

VGS=10V, ID=0.5A

25

200

16 22

gfs

Forward Trans-Conductance

VDS=50V, ID=0.5A

1.0 1.3

CISS

COSS

Input Capacitance

Output Capacitance

162

VGS=0V, VDS=25V,

18

f=1MHz

CRSS

Reverse Transfer Capacitance

3.8

Control Section

fOSC

ΔfOSC

Switching Frequency

Switching Frequency Variation(6)

DMAX

Maximum Duty Cycle

VSTART

VSTOP

UVLO Threshold Voltage

IFB

Feedback Source Current

tS/S

Internal Soft Start Time

Burst Mode Section

-25°C ≤ TA ≤ 85°C

VFB=GND

VFB=GND

0V ≤ VFB ≤ 3V

61 67 73

±5 ±10

60 67 74

8

9

10

6

7

8

0.35 0.40 0.45

10 15 20

VBURH

VBURL

Burst Mode Voltage

VBUR(HYS)

Protection Section

TJ=25°C

Hysteresis

0.6 0.7 0.8

0.45 0.55 0.65

150

ILIM

Peak Current Limit

TSD

Thermal Shutdown Temperature(7)

0.475

125

VSD

Shutdown Feedback Voltage

4.0

VOVP

Over-Voltage Protection

20

IDELAY

Shutdown Delay Current

3V ≤ VFB ≤ VSD

4

Total Device Section

IOP

Operating Supply Current (8)

VCC ≤ 16V

ICH

Start-Up Charging Current

VCC=0V , VSTR=50V

450

Notes:

5. Pulse test: Pulse width ≤ 300µs, duty ≤ 2%.

6. These parameters, although guaranteed, are tested in EDS (wafer test) process.

7. These parameters, although guaranteed, are not 100% tested in production.

8. Control part only.

0.550

145

4.5

5

1.5

550

0.650

5.0

6

3.0

650

Unit

µA

Ω

S

pF

kHz

%

%

V

V

mA

ms

V

V

mV

A

°C

V

V

µA

mA

µA

© 2007 Fairchild Semiconductor Corporation

FSQ100 Rev. 1.0.1

5

www.fairchildsemi.com

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