MTP50N06VL 查看數據表（PDF） - ON Semiconductor

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MTP50N06VL

Power MOSFET 42 Amps, 60 Volts, Logic Level N–Channel TO–220

ON Semiconductor 

MTP50N06VL

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–to–Source Breakdown Voltage

(VGS = 0 Vdc, ID = .25 mAdc)

Temperature Coefficient (Positive)

V(BR)DSS

60

–

–

64

–

Vdc

–

mV/°C

Zero Gate Voltage Drain Current

(VDS = 60 Vdc, VGS = 0 Vdc)

(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)

Gate–Body Leakage Current (VGS = ± 15 Vdc, VDS = 0 Vdc)

ON CHARACTERISTICS (Note 1.)

Gate Threshold Voltage

(VDS = VGS, ID = 250 µAdc)

Threshold Temperature Coefficient (Negative)

IDSS

µAdc

–

–

10

–

–

100

IGSS

–

–

100

nAdc

VGS(th)

1.0

1.4

2.0

Vdc

–

4.3

–

mV/°C

Static Drain–to–Source On–Resistance (VGS = 5 Vdc, ID = 21 Adc)

Drain–to–Source On–Voltage

(VGS = 5 Vdc, ID = 42 Adc)

(VGS = 5 Vdc, ID = 21 Adc, TJ = 150°C)

Forward Transconductance (VDS = 6 Vdc, ID = 20 Adc)

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Transfer Capacitance

(VDS = 25 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

SWITCHING CHARACTERISTICS (Note 2.)

Turn–On Delay Time

Rise Time

Turn–Off Delay Time

Fall Time

(VDD = 30 Vdc, ID = 42 Adc,

VGS = 5 Vdc,

RG = 9.1 Ω)

Gate Charge

(See Figure 8)

(VDS = 48 Vdc, ID = 42 Adc,

VGS = 5 Vdc)

SOURCE–DRAIN DIODE CHARACTERISTICS

Forward On–Voltage

(IS = 42 Adc, VGS = 0 Vdc)

(IS = 42 Adc, VGS = 0 Vdc,

TJ = 150 °C)

Reverse Recovery Time

Reverse Recovery Stored

Charge

(IS = 42 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/µs)

RDS(on)

VDS(on)

gFS

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

QT

Q1

Q2

Q3

VSD

trr

ta

tb

QRR

–

0.025 0.032 Ohm

Vdc

–

–

1.6

–

–

1.5

17

28

–

Mhos

–

1570

2200

pF

–

508

710

–

135

270

–

16

30

ns

–

355

701

–

80

160

–

160

320

–

40

60

nC

–

11

–

–

20

–

–

16

–

Vdc

–

1.03

2.5

–

0.94

–

–

91.1

–

ns

–

63.8

–

–

27.3

–

–

0.299

–

µC

INTERNAL PACKAGE INDUCTANCE

Internal Drain Inductance

(Measured from contact screw on tab to center of die)

(Measured from the drain lead 0.25″ from package to center of die)

LD

nH

–

3.5

–

–

4.5

–

Internal Source Inductance

LS

(Measured from the source lead 0.25″ from package to source bond pad)

1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.

2. Switching characteristics are independent of operating junction temperature.

nH

–

7.5

–

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