2SA1235A 查看數據表（PDF） - Isahaya Electronics

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产品描述 (功能)

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2SA1235A

SILICON PNP EPITAXIAL TYPE(Super mini type)

Isahaya Electronics 

< SMALL-SIGNAL TRANSISTOR >

2SA1235A 2SA1602A

2SA1993

FOR LOW FREQUENCY AMPLIFY APPLICATION

SILICON PNP EPITAXIAL TYPE(Super mini type)

MAXIMUM RATINGS（Ｔａ＝２５℃）

Symbol

Parameter

ＶＣＢＯ

ＶＥＢＯ

ＶＣＥＯ

ＩＣ

ＰＣ

Ｔｊ

Ｔｓｔｇ

Collector to Base voltage

Emitter to Base voltage

Collector to Emitter

voltage

Collector current

Collector dissipation

Junction temperature

Storage temperature

2SA1235A

-60

200

Ratings

2SA1602A

-60

-6

-50

200

200

+150

-55～+150

Unit

2SA1993

-50

V

V

V

mA

450

mW

℃

℃

ELECTRICAL CHARACTERISTICS（Ta=25℃）

Parame

ter

Symbol

Test conditions

Ｖ（ＢＲ）ＣＥＯ

Ｉ ＣＢＯ

Ｉ EＢＯ

ｈＦＥ*

C to E break down voltage

Collector cut off current

Emitter cut off current

DC forward current gain

DC forward current gain

I C=-100μA，RBE=∞

2SA1993

2SA1235A,2SA1602A

VEB=-6V，I C =0

VCE=-6V，I C =-1mA

VCB=-50V，I E =0

VCB=-60V，I E =0

ｈＦＥ

C to E Saturation Vlotage

2SA1993

2SA1235A,2SA1602A

VCE=-6V，I C =-0.1mA

ＶＣＥ（ｓａｔ）

ｆＴ

Cob

NF

Gain bandwidth product

Collector output capacitance

C to E break down voltage

Noise figure

I C =-100mA，I B =-10mA

VCE=-6V，I E =10mA

VCB=-6V，I E =0,f=1MHz

VCE=-6V，I E =0.3mA,f=100Hz,RG=10ｋΩ

*： It shows hFE classification in below table.

Limits

Unit

Min Typ Max

-50

V

-0.1 μA

-0.1

-0.1 μA

150

500

－

50

－

90

－

-0.3

V

200

MHz

4.0

pF

20

dB

ｈFE 2SA1235A

2SA1602A

2SA1993

E

150～300

F

250～500

ISAHAYA ELECTRONICS CORPORATION

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