MPS2222A 查看數據表（PDF） - Zetex => Diodes

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MPS2222A

NPN SILICON PLANAR SWITCHING TRANSISTOR

Zetex => Diodes 

NPN SILICON PLANAR

SWITCHING TRANSISTOR

ISSUE 2 – APRIL 94

FEATURES

* 40 Volt VCEO

* Fast switching

MPS2222A

C

B

E

ABSOLUTE MAXIMUM RATINGS.

E-Line

TO92 Compatible

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

VCBO

75

V

Collector-Emitter Voltage

VCEO

40

V

Emitter-Base Voltage

VEBO

6

V

Continuous Collector Current

IC

800

mA

Power Dissipation at Tamb=25°C

Ptot

500

mW

Operating and Storage Temperature Range

Tj:Tstg

-55 to +175

°C

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).

PARAMETER

SYMBOL MIN. MAX. UNIT CONDITIONS.

Collector-Base

Breakdown Voltage

V(BR)CBO 75

V

IC=10µA, IE=0

Collector-Emitter

Breakdown Voltage

V(BR)CEO 40

V

IC=10mA, IB=0

Emitter-Base Breakdown V(BR)EBO 6

Voltage

V

IE=10µA, IC=0

Collector Cut-Off Current ICBO

Emitter Cut-Off Current

IEBO

Collector-Emitter Cut-Off ICEX

Current

10

nA

VCB=60V, IE=0

10

µA

VCB=60V, IE=0, Tamb=150°C

10

nA

VEB=3V, IC=0

10

nA

VCE=60V, VEB(off)=3V

Collector-Emitter

Saturation Voltage

VCE(sat)

0.3

V

1.0

V

IC=150mA, IB=15mA*

IC=500mA, IB=50mA*

Base-Emitter

Saturation Voltage

VBE(sat)

0.6

1.2

V

2.0

V

IC=150mA, IB=15mA*

IC=500mA, IB=50mA*

Static Forward Current

hFE

Transfer Ratio

35

50

75

35

100

300

50

40

IC=0.1mA, VCE=10V*

IC=1mA, VCE=10V

IC=10mA, VCE=10V*

IC=10mA, VCE=10V, Tamb=-55°C

IC=150mA, VCE=10V*

IC=150mA, VCE=1V*

IC=500mA, VCE=10V*

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%

3-66

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