SW7N60H 查看數據表（PDF） - Unspecified
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SW7N60H Datasheet PDF : 5 Pages
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SAMWIN
Electrical characteristic ( TC = 25oC unless otherwise specified )
Symbol
Parameter
Test conditions
Off characteristics
BVDSS Drain to source breakdown voltage
VGS=0V, ID=250uA
ΔBVDSS Breakdown voltage temperature
/ ΔTJ coefficient
ID=250uA, referenced to 25oC
IDSS Drain to source leakage current
Gate to source leakage current, forward
IGSS
Gate to source leakage current, reverse
On characteristics
VDS=600V, VGS=0V
VDS=480V, TC=125oC
VGS=30V, VDS=0V
VGS=-30V, VDS=0V
VGS(TH)
RDS(ON)
Gfs
Gate threshold voltage
Drain to source on state resistance
Forward Transconductance
Dynamic characteristics
VDS=VGS, ID=250uA
VGS=10V, ID = 3.5A
VDS = 30 V, ID = 3.5A
Ciss Input capacitance
Coss Output capacitance
Crss Reverse transfer capacitance
td(on) Turn on delay time
tr
Rising time
td(off) Turn off delay time
tf
Fall time
Qg
Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VGS=0V, VDS=25V, f=1MHz
VDS=300V, ID=7A, RG=25Ω
(note 4,5)
VDS=480V, VGS=10V, ID=7A
(note 4,5)
Source to drain diode ratings characteristics
Symbol
Parameter
Test conditions
IS
Continuous source current
ISM
Pulsed source current
VSD Diode forward voltage drop.
Trr
Reverse recovery time
Qrr
Reverse recovery Charge
Integral reverse p-n Junction
diode in the MOSFET
IS=7A, VGS=0V
IS=7A, VGS=0V,
dIF/dt=100A/us
※. Notes
1. Repeatitive rating : pulse width limited by junction temperature.
2.
L = 7mH, IAS = 7A, VDD = 50V, RG=25Ω, Starting TJ = 25oC
3.
ISD ≤ 7A, di/dt = 100A/us, VDD ≤ BVDSS, Staring TJ =25oC
4. Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%
5. Essentially independent of operating temperature.
Min.
600
2
5.5
Min.
SW7N60H
Typ. Max. Unit
V
0.6
V/oC
1 uA
50 uA
100 nA
-100 nA
4
V
1.1 1.32 Ω
S
1073
87
pF
15
15
25
30
50
ns
69
100
31
50
28
40
6
nC
12
Typ.
289
3.1
Max. Unit
7
A
28
A
1.5 V
ns
uC
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Feb. 2014. Rev. 1.0
2/5
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