STP4N150 查看數據表（PDF） - STMicroelectronics

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STP4N150

N-channel 1500 V - 5 Ω - 4 A - PowerMESH™ Power MOSFET TO-220 - TO-220FH - TO-247 - TO-3PF

STMicroelectronics 

STFV4N150 - STFW4N150 - STP4N150 - STW4N150

Electrical characteristics

Table 7. Source drain diode

Symbol

Parameter

Test conditions

ISD

ISDM(1)

VSD(2)

Source-drain current

Source-drain current (pulsed)

Forward on voltage

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 4 A, VGS = 0

ISD = 4 A,

di/dt = 100A/µs

VDD = 45V

(see Figure 21)

ISD = 4 A,

di/dt = 100 A/µs

VDD = 45V, Tj = 150°C

(see Figure 21)

1. Pulse width limited by safe operating area

2. Pulsed: pulse duration=300µs, duty cycle 1.5%

Min. Typ. Max. Unit

4

A

12 A

2

V

510

ns

3

µC

12

A

615

ns

4

µC

12.6

A

5/16

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