SF20A600H 查看數據表（PDF） - Kodenshi Auk Co., LTD
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SF20A600H Datasheet PDF : 5 Pages
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Absolute Maximum Ratings (Limiting Values)
Characteristic
Maximum repetitive reverse voltage
Maximum working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current
per diode
total device
Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load per diode
Storage temperature range
Maximum operating junction temperature
SF20A600HPI
Symbol
VRRM
VRWM
VR
IF(AV)
IFSM
Tstg
Tj
Value
Unit
600
V
10
A
20
100
A
-45℃ to +150℃ ℃
150
℃
Thermal Characteristics
Characteristic
Maximum thermal resistance junction to case
per diode
total device
Symbol
Rth(j-c)
Value
4.0
3.6
Unit
℃/W
Electrical Characteristics (Per Diode)
Characteristic
Symbol
Peak forward voltage drop
VFM (1)
Reverse leakage current
IRM (1)
Reverse recovery time
trr
Junction capacitance
Cj
Note : (1) Pulse test : tP≤380 ㎲, Duty cycle≤2%
Test Condition
IFM = 10A
VR = VRRM
Tj=25℃
Tj=125℃
Tj=25℃
Tj=125℃
IF = 1A, di/dt =-100 A/us
VR = 4VDC, f=1MHz
Min. Typ. Max. Unit
-
-
1.90 V
-
-
1.68 V
-
-
20 uA
-
-
200 uA
-
-
35
ns
-
70
-
pF
KSD-D0O033-000
2
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