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XC6118 查看數據表(PDF) - TOREX SEMICONDUCTOR

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XC6118 Datasheet PDF : 20 Pages
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XC6118 Series
ELECTRICAL CHARACTERISTICS (Continued)
XC6118xxxD
PARAMETER
Operating Voltage
Detect Voltage
Hysteresis Width
Detect Voltage
Line Regulation
Supply Current 1 (*2)
Supply Current 2 (*2)
Output Current (*3)
Leakage
Current
CMOS
Output
Nch Open
Drain Output
SYMBOL
VIN
VDF
VHYS
ΔVDF/
(ΔVINVDF)
ISS1
ISS2
IOUT1
IOUT2
CONDITIONS
VDF(T)=0.85.0V (*1)
VIN=1.06.0V
VIN=1.06.0V
VIN=1.06.0V
VSEN=VDF×0.9
VIN=1.0V
VIN=6.0V
VSEN=VDF×1.1
VIN=1.0V
VIN=6.0V
VSEN=0V VDS=0.5V(Nch)
VIN=1.0V
VIN=2.0V
VIN=3.0V
VIN=4.0V
VIN=5.0V
VIN=6.0V
VSEN=6.0V VDS=0.5V(Pch)
VIN=1.0V
VIN=6.0V
ILEAK
VIN=6.0V, VSEN=6.0V,
VOUT=6.0V, Cd: Open
MIN.
1.0
0.1
0.8
1.2
1.6
1.8
1.9
TYP.
E-1
E-3
±0.1
0.4
0.4
0.8
0.9
0.7
1.6
2.0
2.3
2.4
2.5
-0.30
-1.00
0.20
0.20
MAX.
6.0
1.0
1.0
1.6
1.8
-0.08
-0.70
0.40
Ta=25
UNITS
V
V
V
CIRCUITS
-
%/V
μA
μA
mA
mA
μA
Temperature Characteristics
ΔVDF/
(ΔToprVDF)
Sense Resistance (*4)
Undefined Operation (*5)
Detect Delay Time (*6)
Release Delay Time (*7)
RSEN
VUNS
tDF0
tDR0
-40 oCTa85 oC
VSEN=5.0V VIN=0V
VIN=VSEN=01.0V
VIN=6.0V VSEN=6.00V
VIN=6.0V VSEN=06.0V
±100
ppm/oC
E-4
MΩ
0.3
0.4
V
30
230
μs
30
200
μs
NOTE:
*1: VDF (T): Nominal detect voltage
*2: Current to the sense resistor is not included.
*3: IOUT2 is applied only to the XC6118C series (CMOS output).
*4: It is calculated from the voltage value and the current value of the VSEN.
*5: Maximum VOUT voltage when VIN is changed from 0V to 1.0V under connecting the VIN pin to the VSEN pin.
This value is effective only to the XC6118C series (CMOS output).
*6: Delay time from the time of VSEN=VDF to the time of VOUT= 0.6V when the VSEN falls.
*7: Delay time from the time of VIN= VDF +VHYS to the time of VOUT = 5.4V when the VSEN rises.
8/20

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