Refer to the page 6 as to the product guaranteed
maximum junction temperature 150°C
BCR8PM
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR8PM
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
OUTLINE DRAWING
10.5 MAX
5.2
Dimensions
in mm
2.8
TYPE
NAME
VOLTAGE
CLASS
φ3.2±0.2
1.3 MAX
0.8
• IT (RMS) ........................................................................ 8A
• VDRM ....................................................................... 600V
• IFGT !, IRGT !, IRGT # ............................................ 20mA
• Viso ........................................................................ 2000V
• UL Recognized: Yellow Card No.E80276(N)
File No. E80271
2.54
2.54
0.5
2.6
123
∗ Measurement point of
case temperature
2
1 T1 TERMINAL
2 T2 TERMINAL
3 3 GATE TERMINAL
1
TO-220F
APPLICATION
Switching mode power supply, light dimmer, electric flasher unit,
control of household equipment such as TV sets · stereo · refrigerator · washing machine · infrared
kotatsu · carpet, solenoid drivers, small motor control,
copying machine, electric tool,
other general purpose control applications
MAXIMUM RATINGS
Symbol
VDRM
VDSM
Parameter
Repetitive peak off-state voltage ✽1
Non-repetitive peak off-state voltage ✽1
Voltage class
12
600
720
Symbol
IT (RMS)
ITSM
I2t
Parameter
RMS on-state current
Surge on-state current
I2t for fusing
PGM
Peak gate power dissipation
PG (AV)
Average gate power dissipation
VGM
Peak gate voltage
IGM
Peak gate current
Tj
Junction temperature
Tstg
Storage temperature
—
Weight
Viso
Isolation voltage
✽1. Gate open.
Conditions
Commercial frequency, sine full wave 360° conduction, Tc=88°C
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
Ta=25°C, AC 1 minute, T1 · T2 · G terminal to case
Unit
V
V
Ratings
Unit
8
A
80
A
26
A2s
5
W
0.5
W
10
V
2
A
–40 ~ +125
°C
–40 ~ +125
°C
2.0
g
2000
V
Mar. 2002