BCR8PM-16 查看數據表（PDF） - MITSUBISHI ELECTRIC

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BCR8PM-16

TRIAC MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE

MITSUBISHI ELECTRIC  

BREAKOVER VOLTAGE VS.

JUNCTION TEMPERATURE

160

TYPICAL EXAMPLE

140

120

100

80

60

40

20

0

–60 –40 –20 0 20 40 60 80 100120 140

JUNCTION TEMPERATURE (°C)

COMMUTATION CHARACTERISTICS

102

TYPICAL

7 EXAMPLE

5

4

Tj = 125°C

3 IT = 4A

τ = 500µs

2 VD = 200V

f = 3Hz

101

SUPPLY

VOLTAGE

MAIN CURRENT

MAIN

VOLTAGE

(dv/dt)c

TIME

(di/dt)c

TIME

TIME

VD

III QUADRANT

7

5 MINIMUM

4 CHARAC-

3 TERISTICS

2 VALUE

I QUADRANT

100

100 2 3 4 5 7 101 2 3 4 5 7 102

RATE OF DECAY OF ON-STATE

COMMUTATING CURRENT (A/ms)

GATE TRIGGER CHARACTERISTICS TEST CIRCUITS

6Ω

6Ω

6V

A

6V

A

V

RG

V

RG

TEST PROCEDURE 1 TEST PROCEDURE 2

6Ω

6V

A

V

RG

TEST PROCEDURE 3

MITSUBISHI SEMICONDUCTOR 〈TRIAC〉

BCR8PM-16

MEDIUM POWER USE

INSULATED TYPE, PLANAR PASSIVATION TYPE

BREAKOVER VOLTAGE VS.

RATE OF RISE OF

OFF-STATE VOLTAGE

160

TYPICAL EXAMPLE

140

Tj = 125°C

120

100

I QUADRANT

80

III QUADRANT

60

40

20

0

101 2 3 45 7 102 2 3 45 7 103 2 3 45 7 104

RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)

GATE TRIGGER CURRENT VS.

GATE CURRENT PULSE WIDTH

103

7

TYPICAL EXAMPLE

5

IRGT I

4

3

IRGT III

2

102

7 IFGT I

5

4

3

2

101

100 2 3 4 5 7 101 2 3 4 5 7 102

GATE CURRENT PULSE WIDTH (µs)

Mar. 2002

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