C67078-S1301-A3 查看數據表（PDF） - Siemens AG
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C67078-S1301-A3 Datasheet PDF : 9 Pages
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BUZ 11 A
Not for new design
Avalanche energy EAS = ƒ(Tj)
parameter: ID = 30 A, VDD = 25 V
RGS = 25 Ω, L = 15.6 µH
15
mJ
EAS 12
11
10
9
8
7
6
5
4
3
2
1
0
20 40 60 80 100 120 °C 160
Tj
Drain-source breakdown voltage
V(BR)DSS = ƒ(Tj)
Typ. gate charge
VGS = ƒ(QGate)
parameter: ID puls = 56 A
16
V
VGS
12
10
8
0,2
V
DS
max
0,8
V
DS
max
6
4
2
0
0 5 10 15 20 25 30 35 40 nC 50
QGate
60
V
V(BR)DSS 57
56
55
54
53
52
51
50
49
48
47
46
45
-60
-20
20
60
100 °C 160
Tj
Semiconductor Group
8
07/96
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