2SD1439 查看數據表（PDF） - SavantIC Semiconductor
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2SD1439 Datasheet PDF : 3 Pages
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SavantIC Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)EBO Emitter-base breakdown voltage
IE=500mA; IC=0
VCEsat Collector-emitter saturation voltage IC=2A; IB=0.75A
VBEsat
Base-emitter saturation voltage
IC=2A; IB=0.75A
ICBO
Collector cut-off current
VCB=750V; IE=0
ICBO
Collector cut-off current
hFE
DC current gain
ts
Storage time
tf
Fall time
VF
Diode forward voltage
VCB=1500V; IE=0
IC=2A ; VCE=10V
IC=2A
IBend=0.75A,LLeak=5µH
IF=-4A,IB=0
Product Specification
2SD1439
MIN TYP. MAX UNIT
5
V
5.0
V
1.5
V
50
µA
1
mA
4
12
7.0
µs
0.75
µs
2.2
V
2
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