SKP15N60 查看數據表（PDF） - Infineon Technologies
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SKP15N60
Infineon Technologies
SKP15N60 Datasheet PDF : 14 Pages
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SKP15N60, SKB15N60
SKW15N60
Switching Characteristic, Inductive Load, at Tj=25 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during tb
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
trr
tS
tF
Qrr
Irrm
dirr/dt
Tj=25°C,
VCC=400V,IC=15A,
VGE=0/15V,
RG=21Ω,
Lσ1) =180nH,
Cσ1) =250pF
Energy losses include
“tail” and diode
reverse recovery.
Tj=25°C,
VR=200V, IF=15A,
diF/dt=200A/µs
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
Value
typ.
32
23
234
46
0.30
0.27
0.57
279
28
254
390
5.0
180
Unit
max.
38 ns
28
281
55
0.36 mJ
0.35
0.71
- ns
-
-
- nC
-A
- A/µs
Switching Characteristic, Inductive Load, at Tj=150 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during tb
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
trr
tS
tF
Qrr
Irrm
dirr/dt
Tj=150°C
VCC=400V,IC=15A,
VGE=0/15V,
RG=21Ω,
Lσ1) =180nH,
Cσ1) =250pF
Energy losses include
“tail” and diode
reverse recovery.
Tj=150°C
VR=200V, IF=15A,
diF/dt=200A/µs
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
Value
typ.
31
23
261
54
0.45
0.41
0.86
360
40
320
1020
7.5
200
Unit
max.
38 ns
28
313
65
0.54 mJ
0.53
1.07
- ns
-
-
- nC
-A
- A/µs
1) Leakage inductance L σ an d Stray capacity Cσ due to dynamic test circuit in Figure E.
3
Jul-02
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