SVD7N65AF 查看數據表（PDF） - Silan Microelectronics
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SVD7N65AF Datasheet PDF : 7 Pages
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SVD7N65AT/F_Datasheet
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current
ID
Drain Current Pulsed
IDM
Power Dissipation(TC=25°C)
-Derate above 25°C
PD
Single Pulsed Avalanche Energy (Note 1)
EAS
Operation Junction Temperature
TJ
Storage Temperature
Tstg
Rating
SVD7N65AT
SVD7N65AF
650
±30
7.0
28
160
52
1.28
0.42
609
-55～+150
-55～+150
Unit
V
V
A
A
W
W/°C
mJ
°C
°C
THERMAL CHARACTERISTICS
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Rating
SVD7N65AT
SVD7N65AF
0.78
2.4
62.5
120
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
Parameter
Drain -Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Gate Threshold Voltage
Static Drain- Source On State
Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Symbol
BVDSS
IDSS
IGSS
VGS(th)
Test conditions
VGS=0V, ID=250µA
VDS=650V, VGS=0V
VGS=±30V, VDS=0V
VGS= VDS, ID=250µA
RDS(on) VGS=10V, ID=3.5A
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDS=25V,VGS=0V,
f=1.0MHZ
VDD=325V, ID=7.0A,
RG=25Ω
(Note 2,3)
VDS=520V, ID=7.0A,
VGS=10V
(Note 2,3)
Min.
650
--
--
2.0
Typ.
--
--
--
--
Max. Unit
--
V
10 µA
±100 nA
4.0
V
--
1.1 1.4 Ω
-- 1035 --
--
97
--
pF
--
10
--
--
19
--
--
49
--
ns
--
88
--
--
53
--
--
26.8
--
--
5.1
--
nC
--
11.5
--
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.1
2010.11.10
Page 2 of 7
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