IPD090N03LGE8177 查看數據表（PDF） - Infineon Technologies
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IPD090N03LGE8177 Datasheet PDF : 9 Pages
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5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
120
IPD090N03L G E8177
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
20
5V
100
10 V
80
60
4.5 V
4V
16
3.5 V
4V
12
40
20
0
0
1
2
VDS [V]
3.5 V
3.2 V
3V
2.8 V
3
8
4
0
0
20
40
60
ID [A]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
100
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
100
4.5 V
5V
10 V
80
100
80
80
60
60
40
40
20
175 °C
25 °C
0
0
1
2
3
4
5
VGS [V]
20
0
0
20
40
60
80
100
ID [A]
Rev. 2.0
page 5
2014-01-14
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