K6R4008C1D-JC10 查看數據表（PDF） - Samsung

零件编号

产品描述 (功能)

生产厂家

K6R4008C1D-JC10

512K x 8 Bit High-Speed CMOS Static RAM

Samsung 

K6R4008C1D

PRELIMINARY

CMOS SRAM

RECOMMENDED DC OPERATING CONDITIONS*(TA=0 to 70°C)

Parameter

Supply Voltage

Ground

Input High Voltage

Input Low Voltage

Symbol

Min

Typ

VCC

4.5

5.0

VSS

0

0

VIH

2.2

-

VIL

-0.5**

-

* The above parameters are also guaranteed at industrial temperature range.

** VIL(Min) = -2.0V a.c(Pulse Width ≤ 8ns) for I ≤ 20mA.

*** VIH(Max) = VCC + 2.0V a.c (Pulse Width ≤ 8ns) for I ≤ 20mA

Max

5.5

0

VCC+0.5***

0.8

Unit

V

V

V

V

DC AND OPERATING CHARACTERISTICS*(TA=0 to 70°C, Vcc=5.0V±10%, unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Max Unit

Input Leakage Current

Output Leakage Current

ILI

VIN=VSS to VCC

ILO

CS=VIH or OE=VIH or WE=VIL

VOUT=VSS to VCC

-2

2

µA

-2

2

µA

Operating Current

ICC

Min. Cycle, 100% Duty

CS=VIL, VIN=VIH or VIL, IOUT=0mA

Com.

Ind.

10ns

10ns

-

-

65

mA

75

Standby Current

Output Low Voltage Level

ISB

Min. Cycle, CS=VIH

ISB1

f=0MHz, CS≥VCC-0.2V,

VIN≥VCC-0.2V or VIN≤0.2V

VOL

IOL=8mA

-

20

mA

-

5

-

0.4

V

Output High Voltage Level

VOH

IOH=-4mA

2.4

-

V

* The above parameters are also guaranteed at industrial temperature range.

CAPACITANCE*(TA=25°C, f=1.0MHz)

Item

Input/Output Capacitance

Input Capacitance

Symbol

CI/O

CIN

Test Conditions

VI/O=0V

VIN=0V

TYP

-

-

Max

8

6

Unit

pF

pF

* Capacitance is sampled and not 100% tested.

-5-

Rev. 2.0

July 2004

Share Link: