K6R4008C1D-JC10 查看數據表（PDF） - Samsung

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K6R4008C1D-JC10

512K x 8 Bit High-Speed CMOS Static RAM

Samsung 

K6R4008C1D

PRELIMINARY

CMOS SRAM

AC CHARACTERISTICS(TA=0 to 70°C, VCC=5.0V±10%, unless otherwise noted.)

TEST CONDITIONS*

Parameter

Input Pulse Levels

Input Rise and Fall Times

Input and Output timing Reference Levels

Output Loads

*The above test conditions are also applied at industrial temperature range.

Value

0V to 3V

3ns

1.5V

See below

Output Loads(A)

DOUT

ZO = 50Ω

RL = 50Ω

VL = 1.5V

30pF*

Output Loads(B)

for tHZ, tLZ, tWHZ, tOW, tOLZ & tOHZ

DOUT

255Ω

+5.0V

480Ω

5pF*

* Capacitive Load consists of all components of the

test environment.

* Including Scope and Jig Capacitance

READ CYCLE*

Parameter

Symbol

Min

Read Cycle Time

tRC

10

Address Access Time

tAA

-

Chip Select to Output

tCO

-

Output Enable to Valid Output

tOE

-

Chip Enable to Low-Z Output

tLZ

3

Output Enable to Low-Z Output

tOLZ

0

Chip Disable to High-Z Output

tHZ

0

Output Disable to High-Z Output

tOHZ

0

Output Hold from Address Change

tOH

3

Chip Selection to Power Up Time

tPU

0

Chip Selection to Power DownTime tPD

-

* The above parameters are also guaranteed at industrial temperature range.

K6R4008C1D-10

Max

-

10

10

5

-

-

5

5

-

-

10

Unit

ns

ns

ns

ns

ns

ns

ns

ns

ns

ns

ns

-6-

Rev. 2.0

July 2004

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