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MTP3055VL Datasheet PDF : 8 Pages
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MTP3055VL
Preferred Device
Power MOSFET
12 Amps, 60 Volts, Logic Level
N–Channel TO–220
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. Designed for low voltage, high
speed switching applications in power supplies, converters and power
motor controls, these devices are particularly well suited for bridge
circuits where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected voltage
transients.
• Avalanche Energy Specified
• IDSS and VDS(on) Specified at Elevated Temperature
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value
Drain–Source Voltage
Drain–Gate Voltage (RGS = 1.0 MΩ)
Gate–Source Voltage
– Continuous
– Single Pulse (tp ≤ 50 µs)
Drain Current – Continuous @ 25°C
Drain Current – Continuous @ 100°C
Drain Current – Single Pulse (tp ≤ 10 µs)
Total Power Dissipation @ 25°C
Derate above 25°C
VDSS
VDGR
VGS
VGSM
ID
ID
IDM
PD
60
60
±15
± 20
12
8.0
42
48
0.32
Operating and Storage Temperature
Range
TJ, Tstg –55 to
175
Single Pulse Drain–to–Source Avalanche
EAS
72
Energy – Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 5.0 Vdc,
IL = 12 Apk, L = 1.0 mH, RG =25 Ω)
Thermal Resistance
– Junction to Case
– Junction to Ambient
RθJC
3.13
RθJA
62.5
Maximum Lead Temperature for Soldering
TL
260
Purposes, 1/8″ from case for 10
seconds
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
Watts
W/°C
°C
mJ
°C/W
°C
http://onsemi.com
12 AMPERES
60 VOLTS
RDS(on) = 180 mΩ
N–Channel
D
G
S
MARKING DIAGRAM
& PIN ASSIGNMENT
4
4
Drain
1
2
3
TO–220AB
CASE 221A
STYLE 5
MTP3055VL
LLYWW
1
Gate
3
Source
MTP3055VL
LL
Y
WW
2
Drain
= Device Code
= Location Code
= Year
= Work Week
ORDERING INFORMATION
Device
Package
Shipping
MTP3055VL
TO–220AB
50 Units/Rail
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2000
1
November, 2000 – Rev. 3
Publication Order Number:
MTP3055VL/D
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