2SB1273 查看數據表（PDF） - Inchange Semiconductor
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2SB1273 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SB1273
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=-5mA ,RBE=∞
-60
V
V(BR)CBO Collector-base breakdown voltage
IC=-1mA ,IE=0
-60
V
V(BR)EBO Emitter-base breakdown voltage
IE=-1mA ,IC=0
-6
V
VCEsat Collector-emitter saturation voltage IC=-2A; IB=-0.2A
-0.4 -1.0
V
VBE
Base-emitter on voltage
IC=-0.5A ; VCE=-5V
-0.8 -1.0
V
ICBO
Collector cut-off current
VCB=-40V; IE=0
-100 μA
IEBO
Emitter cut-off current
VEB=-4V; IC=0
-100 μA
体 hFE-1
DC current gain
固I电NC半H导ANGE SEMICONDUCTOR hFE-2
DC current gain
COB
Output capacitance
fT
Transition frequency
IC=-0.5A ; VCE=-5V
IC=-3A ; VCE=-5V
IE=0 ; VCB=-10V,f=1MHz
IC=-0.5A ; VCE=-5V
70
280
20
60
pF
100
MHz
hFE-1 Classifications
Q
R
S
70-140 100-200 140-280
2
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