4501GSD 查看數據表（PDF） - Advanced Power Electronics Corp

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4501GSD

N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power Electronics Corp 

AP4501GSD

P-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)

Symbol

Parameter

Test Conditions

Min. Typ. Max. Units

BVDSS

RDS(ON)

Drain-Source Breakdown Voltage

Static Drain-Source On-Resistance2

VGS=0V, ID=-250uA

VGS=-10V, ID=-5A

VGS=-4.5V, ID=-3A

-30 - - V

- - 49 mΩ

- - 75 mΩ

VGS(th)

Gate Threshold Voltage

VDS=VGS, ID=-250uA

-1 - -3 V

gfs

IDSS

IGSS

Qg

Qgs

Qgd

td(on)

tr

td(off)

tf

Ciss

Coss

Crss

Forward Transconductance

Drain-Source Leakage Current ( Tj =25oC)

Drain-Source Leakage Current ( Tj =70oC)

Gate-Source Leakage

Total Gate Charge2

Gate-Source Charge

Gate-Drain ("Miller") Charge

Turn-on Delay Time2

Rise Time

Turn-off Delay Time

Fall Time

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

VDS=-10V, ID=-5A

VDS=-30V, VGS=0V

VDS=-24V, VGS=0V

VGS=±20V

ID=-5A

VDS=-15V

VGS=-4.5V

VDS=-15V

ID=-1A

RG=3.3Ω,VGS=-10V

RD=15Ω

VGS=0V

VDS=-25V

f=1.0MHz

- 5 -S

- - -1 uA

- - -25 uA

- - ±100 nA

- 8 15 nC

- 1.7 - nC

- 4.5 - nC

- 6.7 - ns

- 10 - ns

- 21 - ns

- 10 - ns

- 595 730 pF

- 80 - pF

- 75 - pF

Source-Drain Diode

Symbol

VSD

trr

Parameter

Forward On Voltage2

Reverse Recovery Time2

Qrr

Reverse Recovery Charge

Test Conditions

IS=-1.7A, VGS=0V

IS=-5A, VGS=0V,

dI/dt=100A/µs

Min. Typ. Max. Units

- - -1.2 V

- 18 - ns

- 11 - nC

Notes:

1.Pulse width limited by Max. junction temperature.

2.Pulse test

3.Mounted on 1 in2 copper pad of FR4 board ; 90℃/W when mounted on Min. copper pad.

THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.

THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT

DEVICE OR SYSTEM ARE NOT AUTHORIZED.

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