4501GSD 查看數據表（PDF） - Advanced Power Electronics Corp
零件编号
产品描述 (功能)
生产厂家
4501GSD Datasheet PDF : 7 Pages
| |||
AP4501GSD
N-Channel
40
T A =25 o C
30
10V
8.0V
6.0V
5.0V
20
V G =4. 0 V
10
0
0
1
2
3
4
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100
I D =7A
T A =25 ℃
70
40
10
2
5
8
11
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
10
1
T J =150 o C
0.1
T J =25 o C
0.01
0
0.4
0.8
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
36
T A =150 o C
24
10V
8.0V
6.0V
5.0V
12
V G =4.0V
0
0
2
3
5
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2
I D =7A
V G = 10V
1.4
0.8
0.2
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
3
2.5
2
1.5
1
0.5
0
-50
0
50
100
150
T j , Junction Temperature ( o C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
4/7
Share Link: 