4501GSD 查看數據表（PDF） - Silicon Standard Corp.
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4501GSD Datasheet PDF : 8 Pages
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SSM4501GSD
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
PRODUCT SUMMARY
Simple Drive Requirement
Low On-resistance
Fast Switching Characteristic
DESCRIPTION
D2
D2
D1
D1
PDIP-8
G2
S2
G1
S1
N-CH
P-CH
BVDSS
RDS(ON)
ID
BVDSS
RDS(ON)
ID
The advanced power MOSFETs from Silicon Standard Corp.
provide the designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
D1
30V
27mΩ
7A
-30V
49mΩ
-5A
D2
Pb-free; RoHS-compliant
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
VGS
ID@TA=25℃
ID@TA=70℃
IDM
PD@TA=25℃
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
THERMAL DATA
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient3
G1
S1
G2
S2
Rating
N-channel P-channel
30
-30
±20
±20
7
-5
5.8
-4.2
40
-30
2
0.016
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Max.
Value
62.5
Unit
℃/W
01/28/2008 Rev.1.00
www.SiliconStandard.com
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