4501GSD 查看數據表（PDF） - Silicon Standard Corp.

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4501GSD

N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Silicon Standard Corp. 

SSM4501GSD

N-CH ELECTRICAL CHARACTERISTICS

@TJ=25 oC (unless otherwise specified )

Symbol

BVDSS

ΔBVDSS/ΔTj

RDS(ON)

VGS(th)

gfs

IDSS

IGSS

Qg

Qgs

Qgd

td(on)

tr

td(off)

tf

Ciss

Coss

Crss

Parameter

Test Conditions

Drain-Source Breakdown Voltage

VGS=0V, ID=250uA

Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA

Static Drain-Source On-Resistance2 VGS=10V, ID=7A

VGS=4.5V, ID=5A

Gate Threshold Voltage

VDS=VGS, ID=250uA

Forward Transconductance

Drain-Source Leakage Current (Tj=25oC)

Drain-Source Leakage Current (Tj=70oC)

Gate-Source Leakage

Total Gate Charge2

Gate-Source Charge

Gate-Drain ("Miller") Charge

Turn-on Delay Time2

Rise Time

Turn-off Delay Time

VDS=10V, ID=7A

VDS=30V, VGS=0V

VDS=24V, VGS=0V

VGS=±20V

ID=7A

VDS=24V

VGS=4.5V

VDS=15V

ID=1A

RG=3.3Ω,VGS=10V

Fall Time

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

RD=15Ω

VGS=0V

VDS=25V

f=1.0MHz

SOURCE-DRAIN DIODE

Symbol

VSD

trr

Qrr

Parameter

Forward On Voltage2

Reverse Recovery Time2

Reverse Recovery Charge

Test Conditions

IS=1.7A, VGS=0V

IS=7A, VGS=0V,

dI/dt=100A/µs

Min. Typ. Max. Units

30 - - V

- 0.03 - V/℃

- - 27 mΩ

- - 50 mΩ

1 - 3V

- 12 - S

- - 1 uA

- - 25 uA

- - ±100 nA

- 9 13 nC

- 2 - nC

- 5 - nC

- 6 - ns

- 5 - ns

- 19 - ns

- 4 - ns

- 645 800 pF

- 150 - pF

- 95 - pF

Min. Typ. Max. Units

- - 1.2 V

- 16 - ns

- 10 - nC

01/28/2008 Rev.1.00

www.SiliconStandard.com

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