4501GSD 查看數據表（PDF） - Silicon Standard Corp.

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4501GSD

N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Silicon Standard Corp. 

P-Channel

12

I D =-5.0A

10 V DS =-24V

8

6

4

2

0

0

4

8

12

16

Q G , Total Gate Charge (nC)

Fig 7. Gate Charge Characteristics

100

100us

10

1ms

10ms

1

100ms

1s

0.1

T A =25 o C

10s

DC

Single Pulse

0.01

0.1

1

10

100

-V DS , Drain-to-Source Voltage (V)

Fig 9. Gate Charge Characteristics

SSM4501GSD

f=1.0MHz

1000

C iss

C oss

C rss

100

10

1

5

9

13

17

21

25

29

-V DS , Drain-to-Source Voltage (V)

Fig 8. Typical Capacitance Characteristics

1

Duty Factor = 0.5

0.1

0.01

0.2

0.1

0.05

0.02

0.01

Single Pulse

0.001

0.0001

0.001

0.01

0.1

1

t , Pulse Width (s)

PDM

t

T

Duty Factor = t/T

Peak Tj = PDM x Rthja + Ta

Rthja=90oC/W

10

100

1000

Fig 10. Typical Capacitance Characteristics

VDS

90%

10%

VGS

td(on) tr

td(off)tf

VG

-4.5V

QGS

QG

QGD

Charge

Q

Fig 11. Switching Time Waveform

Fig 12. Gate Charge Waveform

01/28/2008 Rev.1.00

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