LESHAN RADIO COMPANY, LTD.
L2N7002KWT1G , S-L2N7002KWT1G
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS
V(BR)DSS/TJ
VGS = 0 V, ID = 250 mA
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
IDSS
IGSS
VGS = 0 V,
VDS = 60 V
TJ = 25°C
TJ = 125°C
VGS = 0 V,
VDS = 50 V
TJ = 25°C
VDS = 0 V, VGS = ±20 V
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
VGS(TH)
VGS(TH)/TJ
VGS = VDS, ID = 250 mA
Drain−to−Source On Resistance
RDS(on)
VGS = 10 V, ID = 500 mA
VGS = 5.0 V, ID = 50 mA
Forward Transconductance
gFS
VDS = 5 V, ID = 200 mA
CHARGES AND CAPACITANCES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VGS = 0 V, f = 1 MHz,
VDS = 25 V
Total Gate Charge
QG(TOT)
Threshold Gate Charge
Gate−to−Source Charge
QG(TH)
QGS
VGS = 4.5 V, VDS = 10 V;
ID = 500 mA
Gate−to−Drain Charge
QGD
SWITCHING CHARACTERISTICS, VGS = V (Note 3)
Turn−On Delay Time
td(ON)
Rise Time
Turn−Off Delay Time
tr
td(OFF)
VDS = 10 V, VGEN = 10 V,
ID = 500 mA
Fall Time
tf
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
VGS = 0 V,
IS = 115 mA
2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%
3. Switching characteristics are independent of operating junction temperatures
TJ = 25°C
TJ = 85°C
Min Typ Max Units
60
71
V
mV/°C
1
mA
500
100
nA
±10
mA
1
2.5
V
4.0
mV/°C
2.3
W
2.7
80
mS
34
pF
3
2.2
0.71
nC
0.1
0.32
0.16
3.8
ns
3.4
19
12
1.2
V
0.7
Rev.C 2/6