MURF1630E 查看數據表（PDF） - Thinki Semiconductor Co., Ltd.

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MURF1630E

16.0 Ampere Isolated Glass Passivated Ultra Fast Recovery Rectifier

Thinki Semiconductor Co., Ltd. 

MURF1605 thru MURF1660

®

MURF1605 thru MURF1660

Pb

Pb Free Plating Product

16.0 Ampere Isolated Glass Passivated Ultra Fast Recovery Rectifier

Features

Fast switching for high efficiency

Low forward voltage drop

High current capability

Low reverse leakage current

High surge current capability

Application

Automotive Environment|DC Motor Control

Plating Power Supply|UPS

Amplifier and Sound Device System etc..

Mechanical Data

Case: Molded plastic Isolated/Insulated ITO-220AB

Epoxy: UL 94V-0 rate flame retardant

Terminals: Solderable per MIL-STD-202

method 208

Polarity: As marked on diode body

Mounting position: Any

Weight: 2.03 grams

ITO-220AB

.406(10.3)

.381(9.7)

.134(3.4)

.118(3.0)

Unit : inch (mm)

.189(4.8)

.165(4.2)

.130(3.3)

.114(2.9)

.071(1.8)

.055(1.4)

.055(1.4)

.039(1.0)

.035(0.9)

.011(0.3)

.1

(2.55)

.1

(2.55)

.114(2.9)

.098(2.5)

.032(.8)

MAX

Case

Case

Case

Case

Positive

Negative

Common Cathode Common Anode

Suffix "CT"

Suffix "N"

Doubler Reverse Doubler

Suffix "D"

Suffix "E"

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25oC ambient temperature unless otherwise specified.

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

COMMON CATHODE POLARITY

SUFFIX "CT"

MURF1605CT MURF1610CT MURF1620CT MURF1630CT MURF1640CT MURF1660CT

COMMON ANODE POLARITY

DOUBLER POLARITY

SUFFIX "N" SYMBOL MURF1605N MURF1610N MURF1620N MURF1630N MURF1640N MURF1660N UNIT

SUFFIX "D"

MURF1605D MURF1610D MURF1620D MURF1630D MURF1640D MURF1660D

REVERSE POLARITY

SUFFIX "E"

MURF1605E MURF1610E MURF1620E MURF1630E MURF1640E MURF1660E

Maximum Recurrent Peak Reverse Voltage VRRM

50

100

200

300

400

600

V

Maximum RMS Voltage

VRMS

35

70

140

210

280

420

V

Maximum DC Blocking Voltage

VDC

50

100

200

300

400

600 V

Maximum Average Forward Rectified

Current TC=100oC

IF(AV)

16.0

A

Peak Forward Surge Current, 8.3ms single

Half sine-wave superimposed on rated load IFSM

175

(JEDEC method)

150

A

Maximum Instantaneous Forward Voltage

VF

@ 8.0 A

Maximum DC Reverse Current @TJ=25oC

At Rated DC Blocking Voltage @TJ=125oC

IR

Maximum Reverse Recovery Time (Note 1) Trr

Typical junction Capacitance (Note 2)

CJ

Typical Thermal Resistance (Note 3)

R JC

Operating Junction and Storage

Temperature Range

TJ, TSTG

0.98

1.3

10.0

250

35

90

2.2

-55 to + 150

1.7

V

uA

uA

nS

pF

oCW

oC

NOTES : (1) Reverse recovery test conditions IF= 0.5A, IR= 1.0A, Irr = 0.25A.

(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.

(3) Thermal Resistance junction to case.

Page 1/2

© 2006 Thinki Semiconductor Co.,Ltd.

http://www.thinkisemi.com/

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