SIHF840ASTR-E3(2011) 查看數據表（PDF） - Vishay Semiconductors
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SIHF840ASTR-E3 Datasheet PDF : 11 Pages
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IRF840AS, SiHF840AS, IRF840AL, SiHF840AL
Vishay Siliconix
8.0
6.0
4.0
2.0
0.0
25
91066_09
50
75
100
125
150
TC, Case Temperature (°C)
Fig. 9 - Maximum Drain Current vs. Case Temperature
10
VDS
VGS
Rg
RD
D.U.T.
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
+- VDD
Fig. 10a - Switching Time Test Circuit
VDS
90 %
10 %
VGS
td(on) tr
td(off) tf
Fig. 10b - Switching Time Waveforms
1
D = 0.50
0.20
0.1 0.10
0.05
0.02
0.01
10-2
10-5
Single Pulse
(Thermal Response)
10-4
10-3
PDM
t1
t2
Notes:
1. Duty Factor, D = t1/t2
2. Peak Tj = PDM x ZthJC + TC
10-2
0.1
1
91066_11
t1, Rectangular Pulse Duration (s)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
15 V
VDS
L
Driver
Rg
20 V
tp
D.U.T.
IAS
0.01 Ω
+
- VDAD
Fig. 12a - Unclamped Inductive Test Circuit
VDS
tp
IAS
Fig. 12b - Unclamped Inductive Waveforms
Document Number: 91066
S11-1050-Rev. D, 30-May-11
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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