SIHF840ASTR-E3(2011) 查看數據表（PDF） - Vishay Semiconductors

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SIHF840ASTR-E3
(Rev.:2011)

Power MOSFET

Vishay Semiconductors 

IRF840AS, SiHF840AS, IRF840AL, SiHF840AL

Vishay Siliconix

1200

1000

800

ID

Top 3.6 A

5.1 A

Bottom 8.0 A

600

400

200

0

25

50

75

100

125

150

91066_12c

Starting TJ, Junction Temperature (°C)

Fig. 12c - Maximum Avalanche Energy vs. Drain Current

610

600

590

580

570

560

550

540

0.0 1.0 2.0 3.0 4.0 5.0 6.0

91066_12d

IAV, Avalanche Current (A)

Fig. 12d - Typical Drain-to-Source Voltage vs.

Avalanche Current

10 V

QGS

VG

QG

QGD

Charge

Fig. 13a - Basic Gate Charge Waveform

Current regulator

Same type as D.U.T.

12 V

50 kΩ

0.2 µF

0.3 µF

+

D.U.T. - VDS

VGS

3 mA

IG

ID

Current sampling resistors

Fig. 13b - Gate Charge Test Circuit

www.vishay.com

6

Document Number: 91066

S11-1050-Rev. D, 30-May-11

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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