SIHF840AS-E3 查看數據表（PDF） - Vishay Semiconductors
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SIHF840AS-E3 Datasheet PDF : 8 Pages
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IRF840AS, IRF840AL, SiHF840AS, SiHF840AL
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
500
VGS = 10 V
38
9.0
18
Single
0.85
D
I2PAK
(TO-262)
D2PAK
(TO-263)
G
D
S
G
S
N-Channel MOSFET
FEATURES
• Low Gate Charge Qg Results in Simple Drive
Requirement
Available
• Improved Gate, Avalanche and Dynamic dV/dt RoHS*
Ruggedness
COMPLIANT
• Fully Characterized Capacitance and
Avalanche Voltage and Current
• Effective Coss Specified
• Lead (Pb)-free Available
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• High Speed Power Switching
TYPICAL SMPS TOPOLOGIES
• Two Transistor Forward
• Half Bridge
• Full Bridge
ORDERING INFORMATION
Package
D2PAK (TO-263)
Lead (Pb)-free
IRF840ASPbF
SiHF840AS-E3
SnPb
IRF840AS
SiHF840AS
Note
a. See device orientation.
D2PAK (TO-263)
IRF840ASTRLPbFa
SiHF840ASTL-E3a
IRF840ASTRLa
SiHF840ASTLa
D2PAK (TO-263)
IRF840ASTRRPbFa
SiHF840ASTR-E3a
IRF840ASTRRa
SiHF840ASTRa
I2PAK (TO-262)
IRF840ALPbF
SiHF840AL-E3
IRF840AL
SiHF840AL
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
VDS
VGS
VGS at 10 V
TC = 25 °C
TC = 100 °C
ID
IDM
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc, e
TC = 25 °C
TA = 25 °C
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Temperature
for 10 s
TJ, Tstg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting TJ = 25 °C, L = 16 mH, RG = 25 Ω, IAS = 8.0 A (see fig. 12).
c. ISD ≤ 8.0 A, dI/dt ≤ 100 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.
d. 1.6 mm from case.
e. Uses IRF840A/SiH840A data and test conditions.
* Pb containing terminations are not RoHS compliant, exemptions may apply
LIMIT
500
± 30
8.0
5.1
32
1.0
510
8.0
13
125
3.1
5.0
- 55 to + 150
300d
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
Document Number: 91066
S-81412-Rev. A, 07-Jul-08
www.vishay.com
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