110N06N 查看數據表（PDF） - Infineon Technologies
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110N06N Datasheet PDF : 9 Pages
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Parameter
Symbol Conditions
BSZ110N06NS3 G
min.
Values
typ.
Unit
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C iss
-
C oss
V GS=0 V, V DS=30 V,
f =1 MHz
-
Crss
-
t d(on)
-
tr
V DD=30 V, V GS=10 V,
-
t d(off)
I D=20 A, R G=3 Ω
-
tf
-
Gate Charge Characteristics6)
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Output charge
Q gs
-
Q g(th)
-
Q gd
V DD=30 V, I D=20 A,
-
Q sw
V GS=0 to 10 V
-
Qg
-
V plateau
-
Q oss
V DD=30 V, V GS=0 V
-
Reverse Diode
Diode continuous forward current I S
-
T C=25 °C
Diode pulse current
I S,pulse
-
Diode forward voltage
V SD
V GS=0 V, I F=20 A,
T j=25 °C
-
Reverse recovery time
Reverse recovery charge
t rr
V R=30 V, I F=20A ,
-
Q rr
di F/dt =100 A/µs
-
6) See figure 16 for gate charge parameter definition
2000
440
17
10
77
14
6
2700 pF
590
-
- ns
-
-
-
10
- nC
6
-
2
-
7
-
25
33
5.2
-V
20
27
-
20 A
-
80
0.9
1.2 V
28
- ns
22
- nC
Rev.2.4
page 3
2009-11-12
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