Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits
English
한국어
日本語
русский
简体中文
español
零件编号
产品描述 (功能)
SDD10N01 查看數據表(PDF) - Sirectifier Electronics
零件编号
产品描述 (功能)
生产厂家
SDD10N01
Discrete Diodes
Sirectifier Electronics
SDD10N01 Datasheet PDF : 1 Pages
1
3
2
1
1
SDD10N01
SDD10N02
SDD10N03
SDD10N04
SDD10N05
SDD10N06
SDD10N07
V
RSM
V
50
100
200
400
600
800
1000
SDD10
Discrete Diodes
Dimensions TO-220AB
2
3
V
RRM
V
50
100
200
400
600
800
1000
Dim.
A
B
C
D
E
F
G
H
J
K
M
N
Q
R
Inches
Min. Max.
0.500 0.550
0.580 0.630
0.390 0.420
0.139 0.161
0.230 0.270
0.100 0.125
0.045 0.065
0.110 0.230
0.025 0.040
0.100 BSC
0.170 0.190
0.045 0.055
0.014 0.022
0.090 0.110
Milimeter
Min. Max.
12.70 13.97
14.73 16.00
9.91 10.66
3.54 4.08
5.85 6.85
2.54 3.18
1.15 1.65
2.79 5.84
0.64 1.01
2.54 BSC
4.32 4.82
1.14 1.39
0.35 0.56
2.29 2.79
Symbol
Test Conditions
I
F(AV)M
I
FSM
T
C
=100
o
C; 180
o
sine
T
VJ
=45
o
C;
T
VJ
=150
o
C;
T
VJ
=45
o
C;
I
2
t
T
VJ
=150
o
C;
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
T
VJ
T
VJM
T
stg
M
d
Mounting torque
Weight
Symbol
Test Conditions
I
R
V
F
V
TO
r
T
R
thJC
T
VJ
=T
VJM
; V
R
=V
RRM
I
F
=45A; T
VJ
=25
o
C
For power-loss calculations only
T
VJ
=T
VJM
DC current
Maximum Ratings
Unit
10
A
100
110
90
A
100
50
50
41
A
2
s
42
-40...+180
180
o
C
-40...+150
0.4...0.6
Nm
4
g
Characteristic Values
Unit
<_ 0.5
mA
<_ 1.15
V
0.8
V
40
m
3.5
K/W
Share Link:
datasheetq.com [
Privacy Policy
]
[
Request Datasheet
] [
Contact Us
]