SI4456DY-T1-GE3 查看數據表（PDF） - Vishay Semiconductors
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SI4456DY-T1-GE3 Datasheet PDF : 9 Pages
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TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
70
1.2
VGS = 10 V thru 4 V
56
0.9
42
0.6
28
0.3
14
VGS = 3 V
0
0.0
0.5
1.0
1.5
2.0
2.5
VDS - Drain-to-Source Voltage (V)
Output Characteristics
0.0045
0.0
0
7000
0.0041
0.0037
VGS = 4.5 V
5600
4200
Si4456DY
Vishay Siliconix
TC = 25 °C
TC = 125 °C
1
2
TC = - 55 °C
3
4
5
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
Ciss
0.0033
0.0029
VGS = 10 V
0.0025
0
10
20
30
40
50
60
ID - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
ID = 20 A
8
VDS = 10 V
6
VDS = 20 V
VDS = 30 V
4
2800
1400
Coss
0 Crss
0
8
16
24
32
40
VDS - Drain-to-Source Voltage (V)
Capacitance
1.6
VGS = 10 V, ID = 20 A
1.4
1.2
VGS = 4.5 V, ID = 20 A
1.0
2
0.8
0
0
17
34
51
68
85
Qg - Total Gate Charge (nC)
Gate Charge
0.6
- 50 - 25 0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 73852
S09-0138-Rev. B, 02-Feb-09
www.vishay.com
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