SI4456DY-T1-GE3 查看數據表（PDF） - Vishay Semiconductors
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SI4456DY-T1-GE3 Datasheet PDF : 9 Pages
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Si4456DY
Vishay Siliconix
TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
100
0.020
10
TA = 150 °C
1
0.016
0.012
0.1
TA = 25 °C
0.01
0.001
0.0
0.2
0.4
0.6
0.8
1.0 1.2
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.5
0.008
TA = 125 °C
0.004
TA = 25 °C
0.000
0
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
200
0.2
160
- 0.1
120
ID = 5 mA
- 0.4
80
ID = 250 µA
- 0.7
40
- 1.0
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
100
Limited by RDS(on)*
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
10
1 ms
10 ms
1
100 ms
1s
0.1
10 s
TA = 25 °C
DC
Single Pulse
0.01
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
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4
Document Number: 73852
S09-0138-Rev. B, 02-Feb-09
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