SI4456DY-T1-GE3 查看數據表（PDF） - Vishay Semiconductors
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SI4456DY-T1-GE3 Datasheet PDF : 9 Pages
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TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
40
Si4456DY
Vishay Siliconix
32
24
16
8
0
0
25
50
75
100 125 150
TC - Case Temperature (°C)
Current Derating*
10
2.0
8
1.6
6
1.2
4
0.8
2
0.4
0
0
25
50
75
100 125 150
TC - Case Temperature (°C)
Power, Junction-to-Foot
0.0
0
25
50
75
100 125 150
TA - Ambient Temperature (°C)
Power, Junction-to-Ambient
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 73852
S09-0138-Rev. B, 02-Feb-09
www.vishay.com
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