PHF9NQ20 查看數據表（PDF） - Philips Electronics

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PHF9NQ20

N-channel TrenchMOS™ transistor

Philips Electronics 

Philips Semiconductors

N-channel TrenchMOS transistor

Product specification

PHX9NQ20T , PHF9NQ20T

FEATURES

• ’Trench’ technology

• Low on-state resistance

• Fast switching

• Low thermal resistance

SYMBOL

d

g

s

QUICK REFERENCE DATA

VDSS = 200 V

ID = 5.2 A

RDS(ON) ≤ 400 mΩ

GENERAL DESCRIPTION

N-channel, enhancement mode field-effect power transistor using Trench technology, intended for use in off-line

switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits

and general purpose switching applications.

The PHX9NQ20T is supplied in the SOT186A (FPAK) conventional leaded package

PINNING

SOT186A (FPAK)

SOT186 (FPAK)

PIN

DESCRIPTION

case

1 gate

case

2 drain

3 source

case isolated

12 3

12 3

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER

CONDITIONS

VDSS

VDGR

VGS

ID

IDM

PD

Tj, Tstg

Drain-source voltage

Drain-gate voltage

Gate-source voltage

Continuous drain current

Pulsed drain current

Total power dissipation

Operating junction and

storage temperature

Tj = 25 ˚C to 175˚C

Tj = 25 ˚C to 175˚C; RGS = 20 kΩ

Ths = 25 ˚C; VGS = 10 V

Ths = 100 ˚C; VGS = 10 V

Ths = 25 ˚C

Ths = 25 ˚C

MIN.

-

-

-

-

-

-

-

- 55

MAX.

200

200

± 20

5.2

3.3

21

25

150

UNIT

V

V

V

A

A

A

W

˚C

November 2000

1

Rev 1.100

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