2SC6037G 查看數據表（PDF） - Panasonic Corporation
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2SC6037G Datasheet PDF : 4 Pages
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Transistors
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC6037G
Silicon NPN epitaxial planar type
For general amplification
Complementary to 2SA2161G
Features
Low collector-emitter saturation voltage VCE(sat)
SS-Mini type package, allowing downsizing of the equipment and automatic
/ insertion through the tape packing
e Absolute Maximum Ratings Ta = 25°C
e. Parameter
Symbol Rating
Unit
nc d stag Collector-base voltage (Emitter open)
cle Collector-emitter voltage (Base open)
a e lifecy Emitter-base voltage (Collector open)
ct Collector current
n u du Peak collector current
Pro Collector power dissipation
te tin four Junctiontemperature
wing type tion. Storage temperature
VCBO
15
V
VCEO
12
V
VEBO
5
V
IC
500
mA
ICP
1
A
PC
125
mW
Tj
125
°C
Tstg –55 to +125 °C
Package
Code
SSMini3-F3
Marking Symbol: 4U
Pin Name
1: Base
2: Emitter
3: Collector
ain onludes foilnlotenancceetyped typed t inform/aen/ Electrical Characteristics Ta = 25°C±3°C
c ed inc ed ma tenan tinue type lates o.jp Parameter
Symbol
Conditions
Min Typ Max Unit
M is tinu lan ain con ed ut ic.c Collector-base voltage (Emitter open)
VCBO IC = 10 mA, IE = 0
15
V
p m dis tinu abo son Collector-emitter voltage (Base open)
VCEO IC = 1 mA, IB = 0
12
V
iscon ned con RL ana Emitter-base voltage (Collector open)
VEBO IE = 10 mA, IC = 0
5
V
/D pla dis g U n.p Collector-base cutoff current (Emitter open) ICBO VCB = 10 V, IE = 0
0.1
mA
D ce win ico Forward current transfer ratio
hFE VCE = 2 V, IC = 10 mA
270
680
tenan follo .sem Collector-emitter saturation voltage
VCE(sat) IC = 200 mA, IB = 10 mA
250
mV
in isit ww Transition frequency
fT VCB = 2 V, IE = –10 mA, f = 200 MHz
200
MHz
Ma e v ://w Collector output capacitance
as ttp (Common base, input open circuited)
Cob VCB = 10 V, f = 1 MHz
4.5
pF
Ple h Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: June 2007
SJC00403AED
1
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