2SC4139 查看數據表（PDF） - Inchange Semiconductor
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2SC4139 Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC4139
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=25mA ; IB=0
400
V
VCEsat Collector-emitter saturation voltage IC=8A; IB=1.6A
0.5
V
VBEsat Base-emitter saturation voltage
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
IC=8A; IB=1.6A
VCB=500V ;IE=0
VEB=10V; IC=0
1.3
V
100 μA
100 μA
hFE
DC current gain
IC=8A ; VCE=4V
10
30
fT
Transition frequency
IE=-1.5A ; VCE=12V
10
MHz
COB
Collector output capacitance
固IN电C半H导AN体GE SEMICONDUCTOR Switching times
ton
Turn-on time
tstg
Storage time
f=1MHz ; VCB=10V
IC=8A;IB1=0.8A;
IB2=-1.6A;RL=25Ω
VCC=200V
85
1.0
3.0
pF
μs
μs
tf
Fall time
0.5 μs
2
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