KSA539YBU 查看數據表（PDF） - Fairchild Semiconductor

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KSA539YBU

PNP Epitaxial Silicon Transistor

Fairchild Semiconductor 

KSA539

Low Frequency Amplifier

• Complement to KSC815

• Collector-Base Voltage: VCBO = -60V

• Collector Power Dissipation: PC = 400mW

• Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)

1

TO-92

1. Emitter 2. Base 3. Collector

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings Ta=25°C unless otherwise noted

Symbol

Parameter

VCBO

VCEO

VEBO

IC

PC

TJ

TSTG

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Power Dissipation

Junction Temperature

Storage Temperature

Ratings

-60

-45

-5

-200

400

150

-55 ~ 150

Units

V

V

V

mA

mW

°C

°C

Electrical Characteristics Ta=25°C unless otherwise noted

Symbol

Parameter

Test Condition

BVCBO

BVCEO

BVEBO

ICBO

IEBO

hFE

VBE(on)

VCE (sat)

VBE (sat)

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

Base-Emitter On Voltage

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

IC = -100µA, IE =0

IC= -10mA, IB=0

IE= -10µA, IC=0

VCB= -45V, IE=0

VEB= -3V, IC=0

VCE= -1V IC= -50mA

VCE= -1V, IC= -10mA

IC= -150mA, IB= -15mA

IC= -150mA, IB= -15mA

Min.

-60

-45

-5

40

-0.60

Typ.

-0.65

-0.25

-0.9

Max.

-100

-100

240

-0.90

-0.5

-1.2

Units

V

V

V

nA

nA

V

V

V

hFE Classification

Classification

hFE

R

40 ~ 80

O

70 ~ 140

Y

120 ~ 240

©2001 Fairchild Semiconductor Corporation

Rev. A1, June 2001

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